The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) in which the oxide layer is replaced by a double layer of nitride and oxide. It is an alternative and supplement to the existing standard MOS technology, wherein the insulation employed is a nitride-oxide layer. It is used in non-volatile computer memory.
Attributes | Values |
---|---|
rdfs:label |
|
rdfs:comment |
|
dbp:wikiPageUsesTemplate | |
Subject | |
prov:wasDerivedFrom | |
Wikipage page ID |
|
page length (characters) of wiki page |
|
Wikipage revision ID |
|
Link from a Wikipage to another Wikipage |
|
has abstract |
|
foaf:isPrimaryTopicOf | |
is Wikipage redirect of | |
is Link from a Wikipage to another Wikipage of | |
is foaf:primaryTopic of |